Mechanism Analysis of Dynamic On-State Resistance Degradation for a Commercial GaN HEMT Using Double Pulse Test

The dynamic on-resistance (RON) behavior of one commercial GaN HEMT device with p-GaN gate is investigated under hard-switching conditions. non-monotonic performance RON off-state voltage ranging from 50 to 400 V ascribed the “leaky dielectric” model. highest normalized value 1.22 appears at 150 and 200 V. gradual increase following maximum are found when exposed a stress for an extended time 100 V, which due much longer trapping compared detrapping related deep acceptors donors. No obvious degradation, thanks suppressed effect, observed higher VDS. From multi-pulse test, seen be insensitive frequency. It demonstrated that leakage, especially source drain contact, key issue in resistance degradation.